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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-12UL TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G G1dB SYMBOL P1dB ( Ta= 25C ) UNIT dBm MIN. 40.5 7.5 -44 TYP. MAX. 41.5 8.5 3.2 38 -47 2.6 3.8 0.6 3.0 80 CONDITIONS VDS= 10V IDSset=2.6A dB A dB % f = 7.5 to 8.5GHz add IM3 Two Tone Test Po=30.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) dBc A C Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT S V A V C/W MIN. -1.0 -5 TYP. 2.5 -2.5 7.2 2.0 MAX. -4.0 2.4 CONDITIONS VDS= 3V IDS= 4.0A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V IGS= -140A Channel to Case gm VGSoff IDSS VGSO Rth(c-c) The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. May 2009 TIM7785-12UL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C ) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 10.0 62.5 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-12UL RF PERFORMANCE Output Power vs. Frequency 44 43 Po (dBm) 42 41 40 39 7 .4 7 .6 7 .8 8 8 .2 8 .4 8 .6 8 .8 VDS= 10V IDS 3.2A Pin= 33dBm Frequency (GHz) Output Power vs. Input Power 43 42 41 40 Po (dBm) 39 f= 8.1GHz VDS= 10V IDS 3.2A 90 80 Po 70 60 50 add 38 37 36 35 34 26 28 30 32 Pin (dBm) 34 36 40 30 20 10 0 add (%) 3 TIM7785-12UL Power Dissipation vs. Case Temperature 100 80 60 P T (W) 40 20 0 0 40 80 120 160 200 Tc () IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 3.2A f= 8.1GHz f= 5MHz -30 IM3 (dBc) -40 -50 -60 25 27 29 31 33 35 Po(dBm), Single Carrier Level 4 |
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